Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVDHaiou Li, Kei May Lau, Zhihong Feng et al.|IEEE Electron Device Letters|2011Cited by 20
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour depositionHaiou Li, Kei May Lau, Wei Huang et al.|Chinese Physics B|2011Cited by 8
Enhancement-mode metamorphic InA1As/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatmentHaiou Li, Kei May Lau, Chak Wah Tang et al.|Unknown|2007Cited by 6
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour depositionHaiou Li, Lau Kei May, Wei Huang et al.|Acta Physica Sinica|2011Cited by 3
Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVDHaiou Li, Kei May Lau, Wei Huang et al.|Science China Physics Mechanics and Astronomy|2011Cited by 2