Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
Haiou Li(Hong Kong University of Science and Technology), Kei May Lau(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology), Wei Huang(Innovation Team (China)), Xiao‐Fang Deng(Guilin University of Technology)
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