Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Haiou Li(Hong Kong University of Science and Technology), Kei May Lau(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology), Zhihong Feng(Stomatology Hospital)
IEEE Electron Device Letters
July 26, 2011
10.1109/led.2011.2159824
Cited by 20

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