Plasma PH<inf>3</inf>-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO<inf>2</inf>/TaN gate stack

Jianqiang Lin(Argonne National Laboratory), D. Z.(Institute of Materials Research and Engineering), Sungjoo Lee(Tohoku University), Hoon-Jung Oh(National University of Singapore), Weifeng Yang(National University of Singapore), Dim‐Lee Kwong(Agency for Science, Technology and Research), G. Q. Lo(Singapore Science Park)
Unknown
December 1, 2008
10.1109/iedm.2008.4796705
Cited by 33

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