Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In <sub>2</sub> Se <sub>3</sub> thin layersSiyuan Wan, Hualing Zeng, Wenguang Zhu et al.|Nanoscale|2018Cited by 264
Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In<sub>2</sub>Se<sub>3</sub>Siyuan Wan, Hualing Zeng, Jiyu Dong et al.|Advanced Functional Materials|2019Cited by 243
Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub>Yue Li, Hualing Zeng, Chen Chen et al.|Advanced Electronic Materials|2020Cited by 89
A switchable diode based on room-temperature two-dimensional ferroelectric {\alpha}-In2Se3 thin layersSiyuan Wan, Hualing Zeng, Yue Li et al.|arXiv (Cornell University)|2018Cited by 65
Non-volatile ferroelectric memory effect in ultrathin α-In2Se3Siyuan Wan, Hualing Zeng, Yue Li et al.|arXiv (Cornell University)|2018Cited by 3