A switchable diode based on room-temperature two-dimensional ferroelectric {\alpha}-In2Se3 thin layers
Siyuan Wan(University of Science and Technology of China), Hualing Zeng(University of Science and Technology of China), Xiaoyu Mao(University of Science and Technology of China), Wenguang Zhu(University of Science and Technology of China), Wei Li(Changsha University of Science and Technology), Yue Li(University of Science and Technology of China)
Cited by 65
Related Papers
Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials
|Nature Communications|2017|1.4k
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In<sub>2</sub>Se<sub>3</sub>
|Nano Letters|2018|821
Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
|Nature Physics|2013|639
Highly Efficient and Exceptionally Durable CO<sub>2</sub> Photoreduction to Methanol over Freestanding Defective Single-Unit-Cell Bismuth Vanadate Layers
|Journal of the American Chemical Society|2017|633
Superconductivity Modulated by Quantum Size Effects
|Science|2004|614