Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In <sub>2</sub> Se <sub>3</sub> thin layers
Siyuan Wan(University of Science and Technology of China), Hualing Zeng(University of Science and Technology of China), Xiaoyu Mao(University of Science and Technology of China), Wei Li(Shanghai Institute of Microsystem and Information Technology), Wenguang Zhu(University of Science and Technology of China), Yue Li(University of Science and Technology of China)
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