Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In <sub>2</sub> Se <sub>3</sub> thin layersSiyuan Wan, Hualing Zeng, Wenguang Zhu et al.|Nanoscale|2018Cited by 264
Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In<sub>2</sub>Se<sub>3</sub>Siyuan Wan, Hualing Zeng, Chen Wang et al.|Advanced Functional Materials|2019Cited by 243
A switchable diode based on room-temperature two-dimensional ferroelectric {\alpha}-In2Se3 thin layersSiyuan Wan, Hualing Zeng, Yue Li et al.|arXiv (Cornell University)|2018Cited by 65
Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In<sub>2</sub>Se<sub>3</sub> (Adv. Funct. Mater. 20/2019)Siyuan Wan, Hualing Zeng, Yue Li et al.|Advanced Functional Materials|2019Cited by 5
Non-volatile ferroelectric memory effect in ultrathin α-In2Se3Siyuan Wan, Hualing Zeng, Zhongyuan Liu et al.|arXiv (Cornell University)|2018Cited by 3