Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration schemeA. Veloso, Naoto Horiguchi, Eddy Simoen et al.|Japanese Journal of Applied Physics|2014Cited by 6
Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration SchemeA. Veloso, Naoto Horiguchi, G. Boccardi et al.|Unknown|2015Cited by 0
Thermal and SF6-plasma treatments for improved (sub-)1nm EOT planar and FinFET-based RMG high-k last devices and enabling a simplified scalable CMOS integration schemeA. Veloso, Naoto Horiguchi, G. Boccardi et al.|Unknown|2013Cited by 0