A correction method of split C–V characteristics based on transmission line model for accurate evaluation of surface carrier concentration and effective mobility in MOSFETsShinichi Takagi, Kasidit Toprasertpong, Mitsuru Takenaka et al.|Japanese Journal of Applied Physics|2024Cited by 1
A Correction Method of Split C-V Characteristics in MOSFETs by Using Transmission Line Model for Accurate Extraction of Effective MobilityShinichi Takagi, Yutong Chen, Xueyang Han et al.|Unknown|2024Cited by 0
Evaluation of Polarization-Induced Interface Degradations in FeFETs Using Quasi-Static Split C-V Techniques: Comparison of Oxide-Semiconductor and Si ChannelsXiaoyong Gao, Kasidit Toprasertpong, Shinichi Takagi et al.|Unknown|2025Cited by 0