A correction method of split C–V characteristics based on transmission line model for accurate evaluation of surface carrier concentration and effective mobility in MOSFETs
Shinichi Takagi(The Open University of Japan), Mitsuru Takenaka(Bunkyo University), Xueyang Han(The University of Tokyo), Takahiro Mori(National Institute of Advanced Industrial Science and Technology), Kasidit Toprasertpong(The University of Tokyo), Yutong Chen(Dalian Ocean University), Hiroshi Oka(Kindai University)
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