Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)Ryuto Machida, Hiroki I. Fujishiro, Issei Watanabe et al.|Applied Surface Science|2015Cited by 11
Comparative study on nano‐scale III‐V double‐gate MOSFETs with various channel materialsAkio Nishida, Hiroki I. Fujishiro, Kei Hasegawa et al.|Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics|2013Cited by 10
Effect of low-temperature-grown GaSb layer on formation of high-density and small GaSb islands on Si(100) substrateRyuto Machida, Hiroki I. Fujishiro, Issei Watanabe et al.|physica status solidi (b)|2016Cited by 10
InSb-based HEMT with over 300 GHz-f<inf>T</inf> using evaporated SiO<inf>x</inf> filmKyousuke Isono, Hiroki I. Fujishiro, Daisuke Tsuji et al.|Unknown|2016Cited by 5
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxyRyuto Machida, Hiroki I. Fujishiro, Sachie Fujikawa et al.|Journal of Crystal Growth|2018Cited by 5