InSb-based HEMT with over 300 GHz-f<inf>T</inf> using evaporated SiO<inf>x</inf> film
Kyousuke Isono(Tokyo University of Science), Hiroki I. Fujishiro(Tokyo University of Science), Daisuke Tsuji(The University of Tokyo), Tatsuya Taketsuru(Tokyo University of Science), Shinsuke Hara(National Institute on Consumer Education), Sachie Fujikawa(Tokyo University of Science), Issei Watanabe(National Institute of Information and Communications Technology), Akira Endoh(Tokyo University of Science), Yoshimi Yamashita(National Institute of Information and Communications Technology), Akifumi Kasamatsu(National Institute of Information and Communications Technology)
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