Comparative study on nano‐scale III‐V double‐gate MOSFETs with various channel materials

Akio Nishida(Renesas Electronics (Japan)), Hiroki I. Fujishiro(Tokyo University of Science), Ryoko Ohama(Tokyo University of Science), Shinsuke Hara(National Institute on Consumer Education), Kei Hasegawa(Tokyo University of Science), Sachie Fujikawa(Tokyo University of Science)
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
October 24, 2013
Cited by 10


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