Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy
Ryuto Machida(Tokyo University of Science), Hiroki I. Fujishiro(Tokyo University of Science), Sachie Fujikawa(Tokyo University of Science), Akifumi Kasamatsu(National Institute of Information and Communications Technology), Issei Watanabe(National Institute of Information and Communications Technology), Kouichi Akahane(National Institute of Information and Communications Technology), Shinsuke Hara(National Institute on Consumer Education)
Cited by 5
Related Papers
Overview of multicarrier CDMA
|IEEE Communications Magazine|1997|2k
Design and performance of multicarrier CDMA system in frequency-selective Rayleigh fading channels
|IEEE Transactions on Vehicular Technology|1999|486
Multicarrier techniques for 4G mobile communications
|Unknown|2003|418
An overview of multi-carrier CDMA
|Unknown|2002|364
An 80-Gb/s 300-GHz-Band Single-Chip CMOS Transceiver
|IEEE Journal of Solid-State Circuits|2019|266