Transparent-conductive-oxide-free front contacts for high-efficiency silicon heterojunction solar cellsShenghao Li, Kaining Ding, Kaifu Qiu et al.|Joule|2021Cited by 76
Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor depositionShenghao Li, Kaining Ding, Manuel Pomaska et al.|Applied Physics Letters|2019Cited by 22
In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/minShenghao Li, Kaining Ding, Manuel Pomaska et al.|ACS Applied Materials & Interfaces|2019Cited by 11
High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/minShenghao Li, Kaining Ding, Manuel Pomaska et al.|Progress in Photovoltaics Research and Applications|2020Cited by 7
Transparent-Conductive-Oxide-Free Front Contacts for High Efficiency Silicon Heterojunction Solar CellsShenghao Li, Kaining Ding, F. Finger et al.|Research Square|2020Cited by 5