High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min
Shenghao Li(Sun Yat-sen University), Kaining Ding(Forschungszentrum Jülich), Manuel Pomaska(Forschungszentrum Jülich), Uwe Rau(RWTH Aachen University), Jan Lossen(International Solar Energy Research Center Konstanz), F. Finger(Forschungszentrum Jülich), Kaifu Qiu(Zhejiang Energy Research Institute), Jan Hoß(International Solar Energy Research Center Konstanz), Ruijiang Hong(Kunming University of Science and Technology)
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