Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition
Shenghao Li(Sun Yat-sen University), Kaining Ding(Forschungszentrum Jülich), Ruijiang Hong(Kunming University of Science and Technology), Johannes Wolff(Forschungszentrum Jülich), Manuel Pomaska(Forschungszentrum Jülich), Andreas Schmalen(Forschungszentrum Jülich), Uwe Rau(RWTH Aachen University), Jan Lossen(International Solar Energy Research Center Konstanz), F. Finger(Forschungszentrum Jülich), F. Pennartz(Forschungszentrum Jülich), Jan Hoß(International Solar Energy Research Center Konstanz), Maurice Nuys(Forschungszentrum Jülich)
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