Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets DevicesQingzhu Zhang, Jun Luo, Lei Cao et al.|Nanomaterials|2021Cited by 71
Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming ProcessQingzhu Zhang, Tianchun Ye, Lingkuan Meng et al.|IEEE Electron Device Letters|2018Cited by 51
Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technologyGuilei Wang, Henry H. Radamson, Junfeng Li et al.|Solid-State Electronics|2014Cited by 47