Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology
Guilei Wang(Beijing Academy of Science and Technology), Henry H. Radamson(Chinese Academy of Sciences), M. Moeen(KTH Royal Institute of Technology), Huaxiang Yin(Chinese Academy of Sciences), Yiluan Guo(Chinese Academy of Sciences), Tao Chen(Sun Yat-sen University), Junfeng Li(Institute of Microelectronics), Jun Luo(Fujian Medical University), Chao Zhao(Chinese Academy of Sciences), Ahmad Abedin(KTH Royal Institute of Technology), Huilong Zhu(University of Chinese Academy of Sciences), Mohammadreza Kolahdouz(University of Tehran)
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