Hole trapping and trap generation in the gate silicon dioxideJ. F. Zhang, R. Degraeve, H.K. Sii et al.|IEEE Transactions on Electron Devices|2001Cited by 68
Mechanism for the generation of interface state precursorsJ. F. Zhang, G. Groeseneken, H.K. Sii et al.|Journal of Applied Physics|2000Cited by 31
Degradation of oxides and oxynitrides under hot hole stressJ. F. Zhang, R. Degraeve, H.K. Sii et al.|IEEE Transactions on Electron Devices|2000Cited by 28
Relation between hole traps and hydrogenous species in silicon dioxidesJ. F. Zhang, C.D. Beech, Chengzhi Zhao et al.|Solid-State Electronics|2002Cited by 24