Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasersT. Namegaya, A. Kasukawa, H. Nakayama et al.|IEEE Journal of Quantum Electronics|1994Cited by 37
1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor depositionA. Kasukawa, Toshio Kikuta, T. Namegaya et al.|IEEE Journal of Quantum Electronics|1993Cited by 28
Extremely high power 1.48 /spl mu/m GaInAsP/InP GRIN-SCH strained MQW lasersA. Kasukawa, Naoki Tsukiji, T. Namegaya et al.|IEEE Photonics Technology Letters|1994Cited by 18
1.48 mu m high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodesT. Namegaya, Toshio Kikuta, R. Katsumi et al.|IEEE Journal of Quantum Electronics|1993Cited by 6
High temperature operation 1,3 \µm GaInAsP/InP GRIN-SCH strained-layer quantum well lasersT. Namegaya, Toshio Kikuta, A. Kasukawa et al.|Conference on Lasers and Electro-Optics|1993Cited by 2