1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition
A. Kasukawa(Furukawa Electric (Japan)), Toshio Kikuta(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), T. Namegaya(Furukawa Electric (Japan)), T. Fukushima(Furukawa Electric (Japan))
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