1.48 mu m high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes
T. Namegaya(Furukawa Electric (Japan)), Toshio Kikuta(Furukawa Electric (Japan)), A. Kasukawa(Furukawa Electric (Japan)), R. Katsumi(Furukawa Electric (Japan)), Shu Namiki(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), Y. Kiratani(Furukawa Electric (Japan))
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