Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers
T. Namegaya(Furukawa Electric (Japan)), A. Kasukawa(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), N. Matsumoto(Furukawa Electric (Japan)), H. Nakayama(Furukawa Electric (Japan))
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