Enhancing FeFET Performance Through H<sub>2</sub> Plasma Treatment: Improving Stability, Conductance, and Hamming Distances in FeCAM DesignsZhongping Huang, Ying–Tsan Tang, C. S. Pai et al.|Unknown|2024Cited by 1
Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2Zhongping Huang, Ying–Tsan Tang, S.-M. Wang et al.|Unknown|2023Cited by 0
Enhanced Performance of P-FeFETs with TiN:2.5nm/Mo/TiN Gate Stacks for 3-Bit-Per-Cell Operation, 3.5V Read-After-Write, and High Endurance (10<sup>9</sup> Cycles) in Compute-in-Memory ApplicationsChin‐Yi Tsai, Ying–Tsan Tang, Yi‐Ting Tsai et al.|Unknown|2025Cited by 0