Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2
Zhongping Huang, Ying–Tsan Tang(National Central University), Yi‐Ting Tsai(National Yang Ming Chiao Tung University), S.-M. Wang(National Central University), Yu‐Ting Chen(National Taiwan University), Z.-K. Chen(National Central University), C. S. Pai(National Central University), C.-R. Liu(National Central University)
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