Enhanced Performance of P-FeFETs with TiN:2.5nm/Mo/TiN Gate Stacks for 3-Bit-Per-Cell Operation, 3.5V Read-After-Write, and High Endurance (10<sup>9</sup> Cycles) in Compute-in-Memory Applications
Chin‐Yi Tsai(National Cheng Kung University), Ying–Tsan Tang(National Central University), Yi‐Ting Tsai(National Yang Ming Chiao Tung University), Ming-Wei Hsiung(National Central University), Yu‐Chang Chen(National Central University)
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