Fundamental optical properties of heavily-boron-doped siliconA. Borghesi, M. Servidori, E. Rimini et al.|Physical review. B, Condensed matter|1987Cited by 16
Optical study of self-annealing in high-current arsenic-implanted siliconA. Borghesi, E. Rimini, S. U. Campisano et al.|Journal of Applied Physics|1985Cited by 15
Reflectancevs. Electroreflectance measurements on arsenic-doped silicon crystalA. Borghesi, E. Rimini, M. Geddo et al.|Il Nuovo Cimento D|1988Cited by 3
Optical Properties of Heavily Doped Semiconductor LayersS. U. Campisano, A. Stella, E. Rimini et al.|Physica Scripta|1987Cited by 3
Optical study of high dose implanted, laser annealed siliconA. Borghesi, E. Rimini, G. Guizzetti et al.|Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms|1987Cited by 2