Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor depositionShenghao Li, Kaining Ding, Ruijiang Hong et al.|Applied Physics Letters|2019Cited by 22
In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/minShenghao Li, Kaining Ding, Manuel Pomaska et al.|ACS Applied Materials & Interfaces|2019Cited by 11
High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/minShenghao Li, Kaining Ding, Uwe Rau et al.|Progress in Photovoltaics Research and Applications|2020Cited by 7