Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment ApplicationsVuong Van Cuong, Shin-Ichiro Kuroki, Hiroshi Sezaki et al.|IEEE Transactions on Electron Devices|2022Cited by 29
High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applicationsVuong Van Cuong, Shin-Ichiro Kuroki, Seiji Ishikawa et al.|Japanese Journal of Applied Physics|2020Cited by 14
Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power ApplicationsVuong Van Cuong, Shin-Ichiro Kuroki, T. Meguro et al.|IEEE Journal of the Electron Devices Society|2025Cited by 12
Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit modelVuong Van Cuong, Shin-Ichiro Kuroki, K. Koyanagi et al.|Japanese Journal of Applied Physics|2023Cited by 5
500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiCVuong Van Cuong, Shin-Ichiro Kuroki, Tadashi Sato et al.|Japanese Journal of Applied Physics|2021Cited by 3