Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model
Vuong Van Cuong(Hiroshima University), Shin-Ichiro Kuroki(Hiroshima University), Hiroshi Sezaki, T. Meguro(Hiroshima University), Seiji Ishikawa, Tomonori Maeda, K. Koyanagi(Hiroshima University)
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