Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications
Vuong Van Cuong(Hiroshima University), Shin-Ichiro Kuroki(Hiroshima University), T. Meguro(Hiroshima University), Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda
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