Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Kuan‐Ting Chen(National Taiwan Normal University), G.-Y. Siang(National Taiwan Normal University), Shih‐Yao Chen(Chung Hwa University of Medical Technology), C.-Y. Liao(National Taiwan Normal University), Pin-Guang Chen(National Taiwan Normal University), M. H. Lee(National Taiwan Normal University), Chieh Lo(National Taiwan Normal University), Shu-Tong Chang(National Taiwan Normal University), Zhengying Wang(Liaocheng University), S.-S. Gu(National Taiwan Normal University), Yu-Chen Chou(National Taiwan Normal University), Ruo-Chun Hong(National Taiwan Normal University), Kai‐Shin Li(National Taiwan Normal University), Hongyu Chen(Wrocław University of Environmental and Life Sciences), Ming-Han Liao(National Chung Hsing University)
IEEE Journal of the Electron Devices Society
January 1, 2018
Cited by 17


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