Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT'sT. Yokoyama, T. Ishikawa, Tsuyoshi Yamamoto et al.|IEEE Electron Device Letters|1987Cited by 23
Selectively doped GaAs/<i>N</i>–AlGaAs heterostructures grown by molecular beam epitaxy for high electron mobility transistor IC applicationsS. Hiyamizu, S. Sasa, J. Saito et al.|Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena|1985Cited by 9