Selectively doped GaAs/<i>N</i>–AlGaAs heterostructures grown by molecular beam epitaxy for high electron mobility transistor IC applicationsS. Hiyamizu, S. Sasa, J. Saito et al.|Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena|1985Cited by 9
Implantation into an Al1-xGaxAs/GaAs heterostructureHiroki Nishi, S. Hiyamizu, Tsuguo Inada et al.|Unknown|1982Cited by 0
The Electrical Effect of AlGaAs Barrier at the Heterointerface of Selectively Doped GaAs/n-AlGaAs HeterostructureT. Ishikawa, S. Hiyamizu, J. Saito|Unknown|1984Cited by 0