Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT's

T. Yokoyama(Fujitsu (Japan)), T. Ishikawa(Fujitsu (Japan)), Tsuyoshi Yamamoto(Fujitsu (Japan)), J. Saito(Hokkaido University), M. Suzuki(Fujitsu (Japan))
IEEE Electron Device Letters
June 1, 1987
Cited by 23


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