Selectively doped GaAs/<i>N</i>–AlGaAs heterostructures grown by molecular beam epitaxy for high electron mobility transistor IC applications
S. Hiyamizu(Fujitsu (Japan)), S. Sasa(Fujitsu (Japan)), Kazuhiro Kondo(Fujitsu (Japan)), Tsuyoshi Yamamoto(Fujitsu (Japan)), T. Ishikawa(Keio University), J. Saito(Hokkaido University)
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
March 1, 1985
Cited by 9
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