Investigation of <italic>In Situ</italic> SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTsHuaxing Jiang, Kei May Lau, Chao Liu et al.|IEEE Transactions on Electron Devices|2017Cited by 121
Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High- ${k}$ ZrO2 Gate DielectricHuaxing Jiang, Kei May Lau, Chak Wah Tang|IEEE Electron Device Letters|2018Cited by 67
Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom DielectricRenqiang Zhu, Kei May Lau, Huaxing Jiang et al.|IEEE Electron Device Letters|2022Cited by 40
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO<sub>2</sub> Gate DielectricHuaxing Jiang, Kei May Lau, Chao Liu et al.|IEEE Transactions on Electron Devices|2018Cited by 35
Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETsRenqiang Zhu, Kei May Lau, Huaxing Jiang et al.|IEEE Electron Device Letters|2021Cited by 33