Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom DielectricRenqiang Zhu, Kei May Lau, Huaxing Jiang et al.|IEEE Electron Device Letters|2022Cited by 40
Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETsRenqiang Zhu, Kei May Lau, Chak Wah Tang et al.|IEEE Electron Device Letters|2021Cited by 33
GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 ARenqiang Zhu, Kei May Lau, Huaxing Jiang et al.|Applied Physics Express|2022Cited by 19
Vertical GaN trench MOSFETs with step-graded channel dopingRenqiang Zhu, Kei May Lau, Huaxing Jiang et al.|Applied Physics Letters|2022Cited by 16
Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistorsHuaxing Jiang, Kei May Lau, Renqiang Zhu et al.|Semiconductor Science and Technology|2020Cited by 13