Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric

Renqiang Zhu(Hong Kong University of Science and Technology), Kei May Lau(Hong Kong University of Science and Technology), Huaxing Jiang(South China University of Technology), Chak Wah Tang(Hong Kong University of Science and Technology)
IEEE Electron Device Letters
January 24, 2022
Cited by 40


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