Investigation of &lt;italic&gt;In Situ&lt;/italic&gt; SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Huaxing Jiang; Kei May Lau; Chak Wah Tang; Xing Lü; Yuying Chen; Chao Liu

doi:10.1109/ted.2016.2638855

Investigation of <italic>In Situ</italic> SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Huaxing Jiang(South China University of Technology), Kei May Lau(Hong Kong University of Science and Technology), Chak Wah Tang(Hong Kong University of Science and Technology), Xing Lü(Hong Kong University of Science and Technology), Yuying Chen(Hong Kong University of Science and Technology), Chao Liu(Ministry of Education)

IEEE Transactions on Electron Devices

January 4, 2017

10.1109/ted.2016.2638855

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