High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode SpacingRu Xu, Youdou Zheng, Peng Chen et al.|Small|2022Cited by 5
High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022)Ru Xu, Youdou Zheng, Peng Chen et al.|Small|2022Cited by 2
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-{\mu}m anode-to-cathode spacingRu Xu, Youdou Zheng, Peng Chen et al.|arXiv (Cornell University)|2021Cited by 0
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode StructureRu Xu, Youdou Zheng, Peng Chen et al.|arXiv (Cornell University)|2022Cited by 0
Matching Design of 650-V Cascode GaN Bidirectional SwitchSheng Li, Weifeng Sun, Jiaxing Wei et al.|IEEE Transactions on Electron Devices|2026Cited by 0