A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
Ru Xu, Youdou Zheng(Collaborative Innovation Center of Advanced Microstructures), Xiangqian Xiu(Nanjing University), Yuyin Li(Nanjing University of Science and Technology), Jing Zhou(Affiliated Hospital of Southwest Medical University), Dunjun Chen(Nanjing University), Rong Zhang(Nanjing University), Yimeng Li(Central South University), Zili Xie(Nanjing University), Jiandong Ye(Nanjing University of Science and Technology), Peng Chen, Tinggang Zhu(Taiwan Semiconductor Manufacturing Company (China))
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