High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-{\mu}m anode-to-cathode spacing
Ru Xu(Nanjing University), Youdou Zheng(Collaborative Innovation Center of Advanced Microstructures), Yi Shi(Sichuan University), Kai Cheng(Nanopolis Suzhou (China)), Xiangqian Xiu(Nanjing University), Yuyin Li(Nanjing University of Science and Technology), Rong Zhang(Nanjing University), Dunjun Chen(Nanjing University), Peng Chen, Yimeng Li(Central South University), Zili Xie(Nanjing University), Jiandong Ye(Nanjing University of Science and Technology), Bin Liu(Nanjing University of Science and Technology), Ping Han(Nanjing University), Jing Zhou(Ministry of Education of the People's Republic of China), Tinggang Zhu(Taiwan Semiconductor Manufacturing Company (China))
arXiv (Cornell University)
August 15, 2021
Cited by 0
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