High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022)
Ru Xu(Nanjing University), Youdou Zheng(Nanjing University of Science and Technology), Yi Shi(Nanjing University of Science and Technology), Tinggang Zhu(Taiwan Semiconductor Manufacturing Company (China)), Peng Chen(Nanjing University), Jing Zhou(Nanjing University of Science and Technology), Kai Cheng(Nanopolis Suzhou (China)), Dunjun Chen(Nanjing University), Yuyin Li(Nanjing University of Science and Technology), Rong Zhang(Nanjing University), Yimeng Li(Central South University), Zili Xie(Nanjing University), Jiandong Ye(Nanjing University of Science and Technology), Bin Liu(Nanjing University of Science and Technology), Xiangqian Xiu(Nanjing University), Ping Han(Nanjing University of Science and Technology)
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