High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing
Ru Xu(Nanjing University), Youdou Zheng(Collaborative Innovation Center of Advanced Microstructures), Yi Shi(Sichuan University), Peng Chen(Nanjing University), Kai Cheng(Nanopolis Suzhou (China)), Xiangqian Xiu(Nanjing University), Yuyin Li(Nanjing University of Science and Technology), Dunjun Chen(Nanjing University), Yimeng Li(Central South University), Jing Zhou(Nanjing University), Zili Xie(Nanjing University), Jiandong Ye(Nanjing University of Science and Technology), Bin Liu(Nanjing University of Science and Technology), Ping Han(Nanjing University), Rong Zhang(Nanjing University), Tinggang Zhu(Taiwan Semiconductor Manufacturing Company (China))
Cited by 5
Related Papers
In situ photodeposition of platinum clusters on a covalent organic framework for photocatalytic hydrogen production
|Nature Communications|2022|396
Conducting Polymer Nanostructures: Template Synthesis and Applications in Energy Storage
|International Journal of Molecular Sciences|2010|348
Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix
|Nature Nanotechnology|2021|245
Comparative Analysis of the Gut Microbiota Composition between Captive and Wild Forest Musk Deer
|Frontiers in Microbiology|2017|135