PBTI characteristics of N-channel tunneling field effect transistor with HfO<inf>2</inf> gate dielectric: New insights and physical model

Genquan Han(Xuzhou University of Technology), Yee‐Chia Yeo(Agency for Science, Technology and Research), Kain Lu Low(University of Liverpool), Bin Liu(Sun Yat-sen University), Yue Yang(University of Connecticut), Pengfei Guo(National University of Singapore), Eng-Huat Toh(GlobalFoundries (Singapore)), Chunlei Zhan(National University of Singapore), Kian Hui Goh(Nanyang Technological University)
Unknown
April 1, 2012
10.1109/vlsi-tsa.2012.6210114
Cited by 8

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