Output beam characteristics of 1.3 µm GaInAsP/InPSL-QW lasers with narrow and circular output beamA. Kasukawa, N. Yokouchi, N. Iwai et al.|Electronics Letters|1995Cited by 25
Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μmN. Yokouchi, A. Kasukawa, N. Yamanaka et al.|IEEE Journal of Quantum Electronics|1996Cited by 20
Very low threshold current density 1.3 µmInAsP/InP/InGaP/InP/GaInAsP strain-compensatedmultiple quantum well lasersA. Kasukawa, N. Iwai, N. Yokouchi et al.|Electronics Letters|1995Cited by 16
Structural dependence of 1.3 µm narrow beamlasers fabricated by selective MOCVDA. Kasukawa, N. Yokouchi, N. Yamanaka et al.|Electronics Letters|1996Cited by 11
Very high characteristic temperature and constant differential quantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirrorA. Kasukawa, N. Yokouchi, N. Iwai et al.|IEEE Journal of Selected Topics in Quantum Electronics|1995Cited by 9