Very low threshold current density 1.3 µmInAsP/InP/InGaP/InP/GaInAsP strain-compensatedmultiple quantum well lasers

A. Kasukawa(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), N. Yokouchi(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan))
Electronics Letters
September 28, 1995
Cited by 16


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